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STGD7NB60ST4 Технические параметры

STMicroelectronics  STGD7NB60ST4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.6V
Number of Elements 1 Element
Test Conditions 480V, 7A, 1k Ω, 15V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 55W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 7A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD7
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 55W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-252AA
Max Breakdown Voltage 600V
Turn On Time 1160 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 7A
Gate Charge 33nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 700ns/-
Switching Energy 3.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGD7NB60ST4 Документы

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