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STGF19NC60WD Технические параметры

STMicroelectronics  STGF19NC60WD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 12A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
HTS Code 8541.29.00.95
Max Power Dissipation 32W
Base Part Number STGF19
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 32W
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 7ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 14A
Reverse Recovery Time 32 ns
JEDEC-95 Code TO-220AB
Max Breakdown Voltage 600V
Turn On Time 25 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 127 ns
Gate Charge 53nC
Td (on/off) @ 25°C 25ns/90ns
Switching Energy 81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

STGF19NC60WD Документы

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