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STGF20H60DF Технические параметры
STMicroelectronics STGF20H60DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Factory Lead Time | 20 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 2V | |
| Test Conditions | 400V, 20A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 37W | |
| Base Part Number | STGF20 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 37W | |
| Input Type | Standard | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 40A | |
| Reverse Recovery Time | 90 ns | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 115nC | |
| Current - Collector Pulsed (Icm) | 80A | |
| Td (on/off) @ 25°C | 42.5ns/177ns | |
| Switching Energy | 209μJ (on), 261μJ (off) | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
STGF20H60DF Документы
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