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STGP7NC60HD Технические параметры

STMicroelectronics  STGP7NC60HD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 2.299997g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 7A, 10 Ω, 15V
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Max Power Dissipation 80W
Current Rating 14A
Base Part Number STGP7
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 80W
Input Type Standard
Turn On Delay Time 18.5 ns
Transistor Application POWER CONTROL
Rise Time 7ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 25A
Reverse Recovery Time 37ns
Continuous Drain Current (ID) 14A
JEDEC-95 Code TO-220AB
Turn On Time 25.5 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Continuous Collector Current 14A
Turn Off Time-Nom (toff) 221 ns
Gate Charge 35nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 18.5ns/72ns
Switching Energy 95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 9.15mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGP7NC60HD Документы

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