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STGW15H120DF2 Технические параметры

STMicroelectronics  STGW15H120DF2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.1V
Test Conditions 600V, 15A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 259W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number STGW15
Element Configuration Single
Input Type Standard
Power - Max 259W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 231 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 15A
IGBT Type Trench Field Stop
Gate Charge 67nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 23ns/111ns
Switching Energy 380μJ (on), 370μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status ROHS3 Compliant
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STGW15H120DF2 Документы

STGW15H120DF2 brand manufacturers: STMicroelectronics, Anli stock, STGW15H120DF2 reference price.STMicroelectronics. STGW15H120DF2 parameters, STGW15H120DF2 Datasheet PDF and pin diagram description download.You can use the STGW15H120DF2 Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW15H120DF2 pin diagram and circuit diagram and usage method of function,STGW15H120DF2 electronics tutorials.You can download from the Anli.