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STGW15S120DF3 Технические параметры

STMicroelectronics  STGW15S120DF3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Factory Lead Time 40 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 15A, 22 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Max Power Dissipation 259W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number STGW15
Input Type Standard
Power - Max 259W
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 30A
Reverse Recovery Time 270 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 15A
IGBT Type Trench Field Stop
Gate Charge 53nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 23ns/140ns
Switching Energy 540μJ (on), 1.38mJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

STGW15S120DF3 Документы

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