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STGW19NC60WD Технические параметры

STMicroelectronics  STGW19NC60WD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 12A, 10 Ω, 15V
Turn Off Delay Time 90 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 125W
Base Part Number STGW19
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 125W
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 7ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 42A
Reverse Recovery Time 31ns
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 204 ns
Gate Charge 53nC
Td (on/off) @ 25°C 25ns/90ns
Switching Energy 81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STGW19NC60WD Документы

STGW19NC60WD brand manufacturers: STMicroelectronics, Anli stock, STGW19NC60WD reference price.STMicroelectronics. STGW19NC60WD parameters, STGW19NC60WD Datasheet PDF and pin diagram description download.You can use the STGW19NC60WD Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW19NC60WD pin diagram and circuit diagram and usage method of function,STGW19NC60WD electronics tutorials.You can download from the Anli.