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STGW20IH125DF Технические параметры

STMicroelectronics  STGW20IH125DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.25kV
Collector-Emitter Saturation Voltage 2.55V
Number of Elements 1 Element
Test Conditions 600V, 15A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 259W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW20
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 259W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.25kV
Max Collector Current 40A
Voltage - Collector Emitter Breakdown (Max) 1250V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Turn Off Time-Nom (toff) 285 ns
IGBT Type Trench Field Stop
Gate Charge 68nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C -/106ns
Switching Energy 410μJ (off)
RoHS Status ROHS3 Compliant

STGW20IH125DF Документы

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