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STGW30NC60KD Технические параметры

STMicroelectronics  STGW30NC60KD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 20A, 10 Ω, 15V
Turn Off Delay Time 120 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature ULTRA FAST
Max Power Dissipation 200W
Base Part Number STGW30
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Turn On Delay Time 29 ns
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 40 ns
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Turn Off Time-Nom (toff) 290 ns
Gate Charge 96nC
Current - Collector Pulsed (Icm) 125A
Td (on/off) @ 25°C 29ns/120ns
Switching Energy 350μJ (on), 435μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGW30NC60KD Документы

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