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STGW30NC60VD Технические параметры

STMicroelectronics  STGW30NC60VD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 20A, 3.3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 250W
Base Part Number STGW30
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 250W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 44ns
Turn On Time 42.5 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 280 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 31ns/100ns
Switching Energy 220μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 21.07mm
Length 16.02mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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STGW30NC60VD Документы

STGW30NC60VD brand manufacturers: STMicroelectronics, Anli stock, STGW30NC60VD reference price.STMicroelectronics. STGW30NC60VD parameters, STGW30NC60VD Datasheet PDF and pin diagram description download.You can use the STGW30NC60VD Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW30NC60VD pin diagram and circuit diagram and usage method of function,STGW30NC60VD electronics tutorials.You can download from the Anli.