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STGW30V60F Технические параметры

STMicroelectronics  STGW30V60F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.3V
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 260W
Свойство продукта Значение свойства
Base Part Number STGW30
Element Configuration Single
Power Dissipation 260W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 163nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 45ns/189ns
Switching Energy 383μJ (on), 233μJ (off)
Width 5.15mm
Length 15.75mm
Height 20.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

STGW30V60F Документы

STGW30V60F brand manufacturers: STMicroelectronics, Anli stock, STGW30V60F reference price.STMicroelectronics. STGW30V60F parameters, STGW30V60F Datasheet PDF and pin diagram description download.You can use the STGW30V60F Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW30V60F pin diagram and circuit diagram and usage method of function,STGW30V60F electronics tutorials.You can download from the Anli.