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STGW35NC60WD Технические параметры

STMicroelectronics  STGW35NC60WD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 20A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Max Power Dissipation 260W
Base Part Number STGW35
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 250W
Input Type Standard
Power - Max 260W
Transistor Application POWER CONTROL
Rise Time 12ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AC
Turn On Time 42.5 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 20A
Turn Off Time-Nom (toff) 197 ns
Gate Charge 102nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 29.5ns/118ns
Switching Energy 305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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STGW35NC60WD Документы

STGW35NC60WD brand manufacturers: STMicroelectronics, Anli stock, STGW35NC60WD reference price.STMicroelectronics. STGW35NC60WD parameters, STGW35NC60WD Datasheet PDF and pin diagram description download.You can use the STGW35NC60WD Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW35NC60WD pin diagram and circuit diagram and usage method of function,STGW35NC60WD electronics tutorials.You can download from the Anli.