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STGW40NC60KD Технические параметры

STMicroelectronics  STGW40NC60KD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 30A, 10 Ω, 15V
Turn Off Delay Time 164 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250W
Base Part Number STGW40
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Power Dissipation 250W
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 45 ns
Turn On Time 64 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 338 ns
Gate Charge 135nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 46ns/164ns
Switching Energy 595μJ (on), 716μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGW40NC60KD Документы

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