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STGW40S120DF3 Технические параметры

STMicroelectronics  STGW40S120DF3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Factory Lead Time 41 Weeks
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 40A, 15 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 468W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW40
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 468W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 80A
Reverse Recovery Time 355 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 40A
Turn Off Time-Nom (toff) 158.46 ns
IGBT Type Trench Field Stop
Gate Charge 129nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 35ns/148ns
Switching Energy 1.43mJ (on), 3.83mJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

STGW40S120DF3 Документы

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