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STGW45HF60WDI Технические параметры

STMicroelectronics  STGW45HF60WDI technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.9V
Number of Elements 1 Element
Test Conditions 400V, 30A, 4.7 Ω, 15V
Turn Off Delay Time 145 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250W
Свойство продукта Значение свойства
Base Part Number STGW45
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 90 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Gate Charge 160nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/145ns
Switching Energy 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGW45HF60WDI Документы

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