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STGW60H65DF Технические параметры

STMicroelectronics  STGW60H65DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status NRND (Last Updated: 8 months ago)
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1 Element
Test Conditions 400V, 60A, 10 Ω, 15V
Turn Off Delay Time 165 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 360W
Свойство продукта Значение свойства
Base Part Number STGW60
JESD-30 Code R-PSFM-T3
Element Configuration Single
Input Type Standard
Turn On Delay Time 67 ns
Power - Max 360W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 120A
Reverse Recovery Time 62 ns
Turn On Time 113 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 60A
Turn Off Time-Nom (toff) 247 ns
IGBT Type Trench Field Stop
Gate Charge 206nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 67ns/165ns
Switching Energy 1.5mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STGW60H65DF Документы

STGW60H65DF brand manufacturers: STMicroelectronics, Anli stock, STGW60H65DF reference price.STMicroelectronics. STGW60H65DF parameters, STGW60H65DF Datasheet PDF and pin diagram description download.You can use the STGW60H65DF Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW60H65DF pin diagram and circuit diagram and usage method of function,STGW60H65DF electronics tutorials.You can download from the Anli.