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STGW60H65DRF Технические параметры
STMicroelectronics STGW60H65DRF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Factory Lead Time | 32 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Weight | 6.500007g | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.9V | |
| Test Conditions | 400V, 60A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 420W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | STGW60 | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 420W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 120A | |
| Reverse Recovery Time | 19 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 217nC | |
| Current - Collector Pulsed (Icm) | 240A | |
| Td (on/off) @ 25°C | 85ns/178ns | |
| Switching Energy | 940μJ (on), 1.06mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STGW60H65DRF Документы
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