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STGW80H65DFB Технические параметры

STMicroelectronics  STGW80H65DFB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.6V
Test Conditions 400V, 80A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 469W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number STGW80
Element Configuration Single
Input Type Standard
Power - Max 469W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Reverse Recovery Time 85 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
IGBT Type Trench Field Stop
Gate Charge 414nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 84ns/280ns
Switching Energy 2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max 20V
Height 20.15mm
Length 15.75mm
Width 5.15mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STGW80H65DFB Документы

STGW80H65DFB brand manufacturers: STMicroelectronics, Anli stock, STGW80H65DFB reference price.STMicroelectronics. STGW80H65DFB parameters, STGW80H65DFB Datasheet PDF and pin diagram description download.You can use the STGW80H65DFB Transistors - IGBTs - Single, DSP Datesheet PDF, find STGW80H65DFB pin diagram and circuit diagram and usage method of function,STGW80H65DFB electronics tutorials.You can download from the Anli.