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STGWA19NC60HD Технические параметры

STMicroelectronics  STGWA19NC60HD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 12A, 10 Ω, 15V
Turn Off Delay Time 97 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 208W
Base Part Number STGWA19
Pin Count 3
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 208W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 52A
Reverse Recovery Time 31 ns
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 52A
Turn Off Time-Nom (toff) 272 ns
Gate Charge 53nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/97ns
Switching Energy 85μJ (on), 189μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 25.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGWA19NC60HD Документы

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