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STGWA30M65DF2 Технические параметры

STMicroelectronics  STGWA30M65DF2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.55V
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 258W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWA30
Element Configuration Single
Input Type Standard
Power - Max 258W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 60A
Reverse Recovery Time 140 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 80nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 31.6ns/115ns
Switching Energy 300μJ (on), 960μJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

STGWA30M65DF2 Документы

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