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STGWA80H65DFB Технические параметры
STMicroelectronics STGWA80H65DFB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Test Conditions | 400V, 80A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 469W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | STGWA80 | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 469W | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 120A | |
| Reverse Recovery Time | 85 ns | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 414nC | |
| Current - Collector Pulsed (Icm) | 240A | |
| Td (on/off) @ 25°C | 84ns/280ns | |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) | |
| RoHS Status | ROHS3 Compliant |
STGWA80H65DFB Документы
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