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STGWT20H60DF Технические параметры

STMicroelectronics  STGWT20H60DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Test Conditions 400V, 20A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 167W
Base Part Number STGWT20
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 90ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
IGBT Type Trench Field Stop
Gate Charge 115nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 42.5ns/177ns
Switching Energy 209μJ (on), 261μJ (off)
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

STGWT20H60DF Документы

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