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STGWT40H65FB Технические параметры
STMicroelectronics STGWT40H65FB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | NRND (Last Updated: 8 months ago) | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Weight | 6.756003g | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.6V | |
| Test Conditions | 400V, 40A, 5 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 283W | |
| Base Part Number | STGWT40 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 283W | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 80A | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 210nC | |
| Current - Collector Pulsed (Icm) | 160A | |
| Td (on/off) @ 25°C | 40ns/142ns | |
| Switching Energy | 498mJ (on), 363mJ (off) | |
| Height | 20.1mm | |
| Length | 15.8mm | |
| Width | 5mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STGWT40H65FB Документы
- DatasheetsSTGW(T)40H65FB
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