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STGWT40V60DF Технические параметры

STMicroelectronics  STGWT40V60DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.35V
Test Conditions 400V, 40A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 283W
Base Part Number STGWT40
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 283W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 41 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 226nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 52ns/208ns
Switching Energy 456μJ (on), 411μJ (off)
Height 26.7mm
Length 15.7mm
Width 5.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGWT40V60DF Документы

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