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STGWT60V60DF Технические параметры

STMicroelectronics  STGWT60V60DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.35V
Test Conditions 400V, 60A, 4.7 Ω, 15V
Turn Off Delay Time 208 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 375W
Base Part Number STGWT60
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 375W
Input Type Standard
Turn On Delay Time 60 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 74ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
IGBT Type Trench Field Stop
Gate Charge 334nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 60ns/208ns
Switching Energy 750μJ (on), 550μJ (off)
Height 26.7mm
Length 15.7mm
Width 5.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGWT60V60DF Документы

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