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STGY50NC60WD Технические параметры

STMicroelectronics  STGY50NC60WD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 40A, 10 Ω, 15V
Turn Off Delay Time 240 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Max Power Dissipation 278W
Base Part Number STGY50
Pin Count 3
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 260W
Input Type Standard
Turn On Delay Time 52 ns
Power - Max 278W
Transistor Application POWER CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
Reverse Recovery Time 55 ns
Turn On Time 69 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
Turn Off Time-Nom (toff) 271 ns
Gate Charge 195nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 52ns/240ns
Switching Energy 365μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.3mm
Length 15.9mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STGY50NC60WD Документы

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