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STI25NM60ND Технические параметры

STMicroelectronics  STI25NM60ND technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 160W Tc
Turn Off Delay Time 50 ns
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh™ II
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Base Part Number STI25N
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 30ns
Vgs (Max) ±25V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 850 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

STI25NM60ND Документы

  • Datasheets
STI25NM60ND brand manufacturers: STMicroelectronics, Anli stock, STI25NM60ND reference price.STMicroelectronics. STI25NM60ND parameters, STI25NM60ND Datasheet PDF and pin diagram description download.You can use the STI25NM60ND Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find STI25NM60ND pin diagram and circuit diagram and usage method of function,STI25NM60ND electronics tutorials.You can download from the Anli.