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STI30N65M5 Технические параметры

STMicroelectronics  STI30N65M5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 50 ns
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE ENERGY RATED
Terminal Position SINGLE
Base Part Number STI30N
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 139m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 8ns
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 88A
Avalanche Energy Rating (Eas) 500 mJ
Height 10.75mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

STI30N65M5 Документы

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