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STMicroelectronics STP10P6F6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | STMicroelectronics | |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
Factory Lead Time | 20 Weeks | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 10A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 30W Tc | |
Turn Off Delay Time | 16.5 ns | |
Operating Temperature | 175°C TJ | |
Packaging | Tube | |
Series | DeepGATE™, STripFET™ VI | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Base Part Number | STP10 |
Свойство продукта | Значение свойства | |
---|---|---|
JESD-30 Code | R-PSFM-T3 | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 35W | |
Case Connection | DRAIN | |
FET Type | P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 160m Ω @ 5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 48V | |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V | |
Rise Time | 7ns | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 10 ns | |
Continuous Drain Current (ID) | 10A | |
JEDEC-95 Code | TO-220AB | |
Gate to Source Voltage (Vgs) | 20V | |
Drain to Source Breakdown Voltage | 60V | |
Pulsed Drain Current-Max (IDM) | 40A | |
Avalanche Energy Rating (Eas) | 80 mJ | |
RoHS Status | ROHS3 Compliant |