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STP110N8F6 Технические параметры

STMicroelectronics  STP110N8F6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 200W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ F6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP110
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9130pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
Continuous Drain Current (ID) 110A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 180 mJ
RoHS Status ROHS3 Compliant

STP110N8F6 Документы

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