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STP11NK50Z Технические параметры

STMicroelectronics  STP11NK50Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 125W Tc
Turn Off Delay Time 41 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Current Rating 10A
Base Part Number STP11N
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 14.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Rise Time 18ns
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 40A
Height 9.15mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STP11NK50Z Документы

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