Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
STMicroelectronics STP12N120K5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Factory Lead Time | 17 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 12A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 250W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | MDmesh™ K5 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Base Part Number | STP12 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 250W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 690m Ω @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 44.2nC @ 10V | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 12A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain-source On Resistance-Max | 0.69Ohm | |
| Pulsed Drain Current-Max (IDM) | 48A | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |