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STP12NM50FD Технические параметры

STMicroelectronics  STP12NM50FD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 160W Tc
Turn Off Delay Time 39 ns
Operating Temperature -65°C~150°C TJ
Packaging Tube
Series FDmesh™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 500V
Peak Reflow Temperature (Cel) 245
Current Rating 12A
Base Part Number STP12
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 10ns
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 400 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STP12NM50FD Документы

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