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STP18NM60ND Технические параметры

STMicroelectronics  STP18NM60ND technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 110W Tc
Turn Off Delay Time 13 ns
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh™ II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 290mOhm
Base Part Number STP18N
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 55 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 15.5ns
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±25V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 187 mJ
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STP18NM60ND Документы

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