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STP60NE06L-16 Технические параметры

STMicroelectronics  STP60NE06L-16 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 60A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Turn Off Delay Time 125 ns
Operating Temperature 175°C TJ
Packaging Tube
Series STripFET™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 60A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number STP60N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 5V
Rise Time 155ns
Vgs (Max) ±15V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 60A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 400 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STP60NE06L-16 Документы

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