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STP80N6F6 Технические параметры
STMicroelectronics STP80N6F6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 110A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 120W Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Resistance | 5mOhm | |
| Base Part Number | STP80N |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 7480pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 110A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 60V | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STP80N6F6 Документы
- DatasheetsSTP80N6F6
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