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STP80NF55-08 Технические параметры

STMicroelectronics  STP80NF55-08 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status NRND (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 75 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 8mOhm
Voltage - Rated DC 55V
Current Rating 80A
Base Part Number STP80N
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 85ns
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 15.75mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STP80NF55-08 Документы

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