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STS10DN3LH5 Технические параметры
STMicroelectronics STS10DN3LH5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | STMicroelectronics | |
| Lifecycle Status | NRND (Last Updated: 8 months ago) | |
| Factory Lead Time | 14 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 13 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | STripFET™ V | |
| JESD-609 Code | e4 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 21MOhm | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Max Power Dissipation | 2.5W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | STS10 | |
| Pin Count | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.5W | |
| Turn On Delay Time | 4 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 21m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 5V | |
| Rise Time | 22ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 2.8 ns | |
| Continuous Drain Current (ID) | 10A | |
| Gate to Source Voltage (Vgs) | 22V | |
| Drain to Source Breakdown Voltage | 30V | |
| Pulsed Drain Current-Max (IDM) | 40A | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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