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STS2DNF30L Технические параметры
STMicroelectronics STS2DNF30L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | STMicroelectronics | |
| Lifecycle Status | NRND (Last Updated: 7 months ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 12 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | STripFET™ | |
| JESD-609 Code | e4 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Voltage - Rated DC | 30V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 3A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | STS2D | |
| Pin Count | 8 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 19 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 121pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V | |
| Rise Time | 20ns | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 3A | |
| Threshold Voltage | 1.7V | |
| Gate to Source Voltage (Vgs) | 18V | |
| Drain Current-Max (Abs) (ID) | 3A | |
| Drain-source On Resistance-Max | 0.15Ohm | |
| Drain to Source Breakdown Voltage | 30V | |
| Pulsed Drain Current-Max (IDM) | 9A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 6.35mm | |
| Length | 50.8mm | |
| Width | 6.35mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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