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STS4DNF60L Технические параметры
STMicroelectronics STS4DNF60L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | STripFET™ | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 55mOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | LOW THRESHOLD | |
| Voltage - Rated DC | 60V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 4A | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | STS4D | |
| Pin Count | 8 | |
| Qualification Status | Not Qualified | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 15 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V | |
| Rise Time | 28ns | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 4A | |
| Threshold Voltage | 1.7V | |
| Gate to Source Voltage (Vgs) | 15V | |
| Drain Current-Max (Abs) (ID) | 4A | |
| Drain to Source Breakdown Voltage | 60V | |
| Pulsed Drain Current-Max (IDM) | 16A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 1.25mm | |
| Length | 5mm | |
| Width | 4.05mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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