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STW18N60M2 Технические параметры

STMicroelectronics  STW18N60M2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 110W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Base Part Number STW18N
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±25V
Continuous Drain Current (ID) 13A
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 52A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 135 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STW18N60M2 Документы

STW18N60M2 brand manufacturers: STMicroelectronics, Anli stock, STW18N60M2 reference price.STMicroelectronics. STW18N60M2 parameters, STW18N60M2 Datasheet PDF and pin diagram description download.You can use the STW18N60M2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find STW18N60M2 pin diagram and circuit diagram and usage method of function,STW18N60M2 electronics tutorials.You can download from the Anli.