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MMBT9012H-H35 Технические параметры

ST(Semtech)  MMBT9012H-H35 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 30V
Power Dissipation (Pd) 200mW
MMBT9012H-H35 brand manufacturers: ST(Semtech), Anli stock, MMBT9012H-H35 reference price.ST(Semtech). MMBT9012H-H35 parameters, MMBT9012H-H35 Datasheet PDF and pin diagram description download.You can use the MMBT9012H-H35 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT9012H-H35 pin diagram and circuit diagram and usage method of function,MMBT9012H-H35 electronics tutorials.You can download from the Anli.