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1N4747G Технические параметры
Taiwan Semiconductor 1N4747G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Single | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Breakdown Voltage / V | 51 V | |
| Reverse Stand-off Voltage | 43.6 V | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Package Description | O-LALF-W2 | |
| Package Style | LONG FORM | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | GLASS | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Reference Voltage-Nom | 20 V | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 1N4747G | |
| Power Dissipation (Max) | 1 W | |
| Package Shape | ROUND | |
| Manufacturer | Taiwan Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Risk Rank | 5.27 | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| HTS Code | 8541.10.00.50 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Technology | ZENER | |
| Terminal Position | AXIAL | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | O-LALF-W2 | |
| Qualification Status | Not Qualified | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | ZENER DIODE | |
| Power Dissipation | 1 W | |
| Case Connection | ISOLATED | |
| Max Reverse Leakage Current | 1 µA | |
| Clamping Voltage | 70.1 V | |
| Peak Pulse Current | 21.4 A | |
| Peak Pulse Power | 1.5 kW | |
| Test Current | 12.5 mA | |
| Forward Voltage | 1 V | |
| Zener Voltage | 20 V | |
| Voltage Tol-Max | 5% | |
| Reverse Recovery Time | 50 ns | |
| Max Repetitive Reverse Voltage (Vrrm) | 250 V | |
| JEDEC-95 Code | DO-41 | |
| Working Test Current | 12.5 mA | |
| Max Breakdown Voltage | 53.6 V | |
| Max Forward Surge Current (Ifsm) | 2.5 A | |
| Max Junction Temperature (Tj) | 150 °C | |
| Min Breakdown Voltage | 48.5 V |
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