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1N5406 R0 Технические параметры
Taiwan Semiconductor 1N5406 R0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Taiwan Semiconductor | |
| Material | Si | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 600 | |
| Peak Reverse Repetitive Voltage (V) | 600 | |
| Maximum Continuous Forward Current (A) | 3 | |
| Peak Non-Repetitive Surge Current (A) | 200 | |
| Peak Forward Voltage (V) | 1 | |
| Peak Reverse Current (uA) | 5 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| AEC Qualified | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Standard Package Name | DO-201-AD | |
| Supplier Package | DO-201AD | |
| Military | No | |
| Mounting | Through Hole | |
| Package Length | 9.5(Max) | |
| PCB changed | 2 | |
| Lead Shape | Through Hole | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Pin Count | 2 | |
| Configuration | Single | |
| Diameter | 5.6(Max) | |
| RoHS Status | Yes with exemptions |
1N5406 R0 Документы
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