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BA159G A1G Технические параметры

Taiwan Semiconductor  BA159G A1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 1000
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Standard Package Name DO-204-AL
Supplier Package DO-41
Military No
Mounting Through Hole
Package Length 5.2(Max)
PCB changed 2
Lead Shape Through Hole
Package Description DO-41, 2 PIN
Package Style LONG FORM
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BA159GA1G
Свойство продукта Значение свойства
Package Shape ROUND
Manufacturer Taiwan Semiconductor
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Forward Voltage-Max (VF) 1.2 V
Risk Rank 5.04
Packaging Ammo
Part Status Active
ECCN Code EAR99
Type Switching Diode
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Subcategory Rectifier Diodes
Terminal Position AXIAL
Terminal Form WIRE
Reach Compliance Code compliant
Pin Count 2
JESD-30 Code O-PALF-W2
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 1000 V
JEDEC-95 Code DO-204AL
Non-rep Pk Forward Current-Max 30 A
Reverse Recovery Time-Max 0.25 µs
Diameter 2.7(Max)
RoHS Status Yes with exemptions

BA159G A1G Документы

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