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BA159 R0 Технические параметры

Taiwan Semiconductor  BA159 R0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 1000
Peak Reverse Repetitive Voltage (V) 1000
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Standard Package Name DO-204-AL
Supplier Package DO-41
Military No
Mounting Through Hole
Package Length 5.2(Max)
PCB changed 2
Lead Shape Through Hole
Package Description O-PALF-W2
Package Style LONG FORM
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Свойство продукта Значение свойства
Manufacturer Part Number BA159R0
Package Shape ROUND
Manufacturer Taiwan Semiconductor Manufacturing Company Limited
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Risk Rank 5.33
Packaging Tape and Reel
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Type Switching Diode
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Terminal Position AXIAL
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 2
JESD-30 Code O-PALF-W2
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 1000 V
JEDEC-95 Code DO-41
Reverse Recovery Time-Max 0.25 µs
Diameter 2.7(Max)
RoHS Status Yes with exemptions

BA159 R0 Документы

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