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BAS116 RF Технические параметры

Taiwan Semiconductor  BAS116 RF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Lifecycle Status Production (Last Updated: 2 years ago)
Mounting Type Surface Mount
Package / Case SOT-23-3
Mount Surface Mount
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Terminals 3Terminals
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 75
Peak Reverse Repetitive Voltage (V) 75
Maximum Continuous Forward Current (A) 0.2
Peak Non-Repetitive Surge Current (A) 0.5
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.005
Maximum Power Dissipation (mW) 225
Peak Reverse Recovery Time (ns) 3
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Standard Package Name SOT-23
Supplier Package SOT-23
Military No
Mounting Surface Mount
Package Height 0.95(Max)
Package Length 3.05(Max)
Package Width 1.4(Max)
PCB changed 3
Lead Shape Gull-wing
Number of Elements per Chip 1
Package Type SOT-23
Peak Reverse Recovery Time 3ns
Rectifier Type Low Leakage
Ir - Reverse Current 5 nA
Maximum Diode Capacitance 2 pF
Pd - Power Dissipation 225 mW
Maximum Operating Temperature + 150 C
Unit Weight 0.000282 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Manufacturer Taiwan Semiconductor
Brand Taiwan Semiconductor
If - Forward Current 200 mA
Peak Reverse Voltage 75 V
RoHS Details
Manufacturer Lifecycle Status ACTIVE (Last Updated: 2 years ago)
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Свойство продукта Значение свойства
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Reflow Temperature-Max (s) 30
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BAS116RF
Power Dissipation (Max) 0.225 W
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Risk Rank 5.6
Packaging Tape and Reel
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Type Small Signal Switching Diode
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.70
Subcategory Diodes & Rectifiers
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration Single
Element Configuration Single
Diode Type Fast Switching Diode
Forward Current 500 mA
Max Surge Current 500 mA
Output Current-Max 0.2 A
Forward Voltage 1.25 V
Product Type Diodes - General Purpose, Power, Switching
Rep Pk Reverse Voltage-Max 75 V
Peak Non-Repetitive Surge Current 500 mA
Diode Configuration Single
Recovery Time 3 ns
Reverse Recovery Time-Max 0.003 µs
Product Switching Diodes
Vf - Forward Voltage 1.25 V
Product Category Diodes - General Purpose, Power, Switching
RoHS Status RoHS Compliant
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BAS116 RF Документы

BAS116 RF brand manufacturers: Taiwan Semiconductor, Anli stock, BAS116 RF reference price.Taiwan Semiconductor. BAS116 RF parameters, BAS116 RF Datasheet PDF and pin diagram description download.You can use the BAS116 RF Diodes - RF, DSP Datesheet PDF, find BAS116 RF pin diagram and circuit diagram and usage method of function,BAS116 RF electronics tutorials.You can download from the Anli.