Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BC546AA1 Технические параметры
Taiwan Semiconductor BC546AA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92 | |
| Package | Tape & Box (TB) | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Obsolete | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Number of Elements per Chip | 1 | |
| Dimensions | 5.1 x 4.1 x 4.7mm | |
| Package Type | TO-92 | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Collector Emitter Voltage | 65 V | |
| Maximum DC Collector Current | 100 mA | |
| Minimum DC Current Gain | 110 | |
| Emitter- Base Voltage VEBO | 6 V | |
| Pd - Power Dissipation | 500 mW | |
| Transistor Polarity | NPN | |
| Unit Weight | 0.016000 oz | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 4000 | |
| Mounting Styles | Through Hole | |
| Gain Bandwidth Product fT | - | |
| Part # Aliases | BC546A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | |
| Brand | Taiwan Semiconductor | |
| Collector- Emitter Voltage VCEO Max | 65 V | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BC546AA1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Risk Rank | 5.58 | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Series | - | |
| Packaging | Ammo Pack | |
| Subcategory | Transistors | |
| Technology | Si | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| Polarity | NPN | |
| Configuration | Single | |
| Power - Max | 500 mW | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | - | |
| Voltage - Collector Emitter Breakdown (Max) | 65 V | |
| Frequency - Transition | - | |
| Collector Base Voltage (VCBO) | 80 V | |
| Product Category | Bipolar Transistors - BJT |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ