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Taiwan Semiconductor BC547B A1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92 | |
| Connections | 1/4 NPT | |
| Case Size | 4 | |
| Manufacturer Part Number | 40-901-1000-psi | |
| Case Style | Lower Mount | |
| Range | 0-1,000 psi | |
| Manufacturer | NOSHOK | |
| Emitter-Base Voltage | 6(V) | |
| Operating Temperature Classification | Military | |
| Package Type | TO-92 | |
| Transistor Polarity | NPN | |
| Collector-Base Voltage | 50(V) | |
| Category | Bipolar Small Signal | |
| Operating Temp Range | -65C to 150C | |
| Collector Current (DC) | 0.1(A) | |
| Number of Elements | 1 Element | |
| Rad Hardened | No | |
| Collector-Emitter Voltage | 45(V) | |
| DC Current Gain | 200 | |
| Mounting | Through Hole | |
| Package | Tape & Box (TB) | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Obsolete | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Number of Elements per Chip | 1 | |
| Dimensions | 5.1 x 4.1 x 4.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Collector Emitter Voltage | 45 V | |
| Maximum DC Collector Current | 100 mA | |
| Minimum DC Current Gain | 200 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Emitter- Base Voltage VEBO | 6 V | |
| Pd - Power Dissipation | 500 mW | |
| Unit Weight | 0.016000 oz | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 4000 | |
| Mounting Styles | Through Hole | |
| Gain Bandwidth Product fT | - | |
| Brand | Taiwan Semiconductor | |
| Collector- Emitter Voltage VCEO Max | 45 V | |
| Packaging | Box | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Series | - | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Subcategory | Transistors | |
| Max Power Dissipation | 500 mW | |
| Technology | Si | |
| Frequency | 100(MHz) | |
| Pin Count | 3 | |
| Polarity | NPN | |
| Configuration | Single | |
| Element Configuration | Single | |
| Power Dissipation | 0.5(W) | |
| Output Power | Not Required(W) | |
| Power - Max | 500 mW | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 45 V | |
| Max Collector Current | 200 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | - | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Frequency - Transition | - | |
| Collector Base Voltage (VCBO) | 50 V | |
| Emitter Base Voltage (VEBO) | 6 V | |
| Product Category | Bipolar Transistors - BJT |