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ES1GF R3G Технические параметры

Taiwan Semiconductor  ES1GF R3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 400
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.3
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 35
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Supplier Package SMAF
Military No
Mounting Surface Mount
Package Height 1.1(Max)
Package Length 4.3(Max)
Package Width 2.8(Max)
PCB changed 2
Packaging Tape and Reel
Part Status Obsolete
Type Switching Diode
Pin Count 2
Configuration Single
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ES1GF R3G Документы

ES1GF R3G brand manufacturers: Taiwan Semiconductor, Anli stock, ES1GF R3G reference price.Taiwan Semiconductor. ES1GF R3G parameters, ES1GF R3G Datasheet PDF and pin diagram description download.You can use the ES1GF R3G Diodes - RF, DSP Datesheet PDF, find ES1GF R3G pin diagram and circuit diagram and usage method of function,ES1GF R3G electronics tutorials.You can download from the Anli.